| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc09977864303673eb9482d38f96df69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7282ffd9834c4327d3052d005318ec2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4558
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45568 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2012-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4f8461f8fe2c3ac3e131b916e2be86b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ad04cd7c93dd2df796a99ecdc0263b2 |
| publicationDate |
2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013016191-A2 |
| titleOfInvention |
Methods and apparatus for the deposition of materials on a substrate |
| abstract |
Methods and apparatus for deposition of materials on substrates are provided herein. In some embodiments, an apparatus may include a process chamber having a substrate support; a heating system to provide heat energy to the substrate support; a gas inlet port disposed to a first side of the substrate support to provide at least one of a first process gas or a second process gas across a processing surface of the substrate; a first gas distribution conduit disposed above the substrate support and having one or more first outlets disposed along the length of the first gas distribution conduit to provide a third process gas to the processing surface of the substrate, wherein the one or more first outlets are substantially linearly arranged; and an exhaust manifold disposed to a second side of the substrate support opposite the gas inlet port to exhaust the process gases from the process chamber. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10208397-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4033011-A4 |
| priorityDate |
2011-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |