| abstract |
A polysilicon receptacle, which is positioned at the bottom of a silicon melting and deposition reactor, and which does not allow surface alteration to occur in polysilicon contained in the receptacle, is provided. The receptacle (15), which is positioned at the bottom of the silicon melting and deposition reactor (1) and is for receiving polysilicon that has melted and dropped from the inner surface of the reactor (1), is characterized in that a surface processing layer that prevents desorption of water is formed on at least the inner surface of the receptacle (15). |