| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f8c82cf932bd5acc32b6434f11b54d16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd5173987fb5ab51ef9efdd2ff3a2f6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a679463265e2d8778cdf0af362852e4e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0c178b448586795ba2aab089c57ff3dd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2012-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b65f3a28f6212b6415b1024db9fd32be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64798908556be6162f7ce2ad482575d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c12b522f373e2dd924b876e8625f53eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b3c170be493237bbc83846ddeeb8212 |
| publicationDate |
2012-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2012177789-A2 |
| titleOfInvention |
Integrated process modulation for psg gapfill |
| abstract |
A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8497211-B2 |
| priorityDate |
2011-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |