| abstract |
This nitride semiconductor device is provided with: a first electrode wiring layer and a second electrode wiring layer, which are formed on a nitride semiconductor layer; a first insulating film, which is formed on the first electrode wiring layer and the second electrode wiring layer, and has first openings; a first wiring layer (17a) and a second wiring layer (17b), which are formed on the first insulating film, and are respectively connected to the first electrode wiring layer and the second electrode wiring layer via the first openings; a second insulating film (18), which is formed on the first wiring layer and the second wiring layer, and has second openings; and first pad layer (22a) and a second pad layer (22b), which are formed on the second insulating film, and are respectively connected to the first wiring layer and the second wiring layer via the second openings. |