| abstract |
This semiconductor device comprises: a first insulating film (1) that is formed on a semiconductor substrate (20); a first wiring line (2) that is formed on the first insulating film (1); a second insulating film (3) that is formed on the first insulating film (1) so as to cover the first wiring line (2); and a second wiring line (30) that is formed on the second insulating film (3). The second wiring line (30) comprises a barrier layer (4) that is formed on the second insulating film (3) and a plating layer (6) that is formed on the barrier layer (4). The barrier layer (4) prevents diffusion of the constituent atoms of the plating layer (6) into the second insulating film (3), and the width of the barrier layer (4) is larger than the width of the plating layer (6). |