http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012145657-A3

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filingDate 2012-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16cc48649a4dad41552efb95f0091986
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publicationDate 2013-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2012145657-A3
titleOfInvention Selective silicon nitride etch
abstract Methods and etchant solutions for etching silicon nitride on a workpiece are provided. One method generally includes exposing the workpiece to a chemistry mixture including phosphoric acid and a diluent, wherein the chemistry mixture has a water content of less than 10% by volume, and heating at least one of the workpiece and the chemistry mixture to a process temperature to etch silicon nitride from the workpiece.
priorityDate 2011-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.