Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ebde951fda068a8e2c07756358f6f8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad4434e86e1cb1041695800de4e8fabe |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
filingDate |
2012-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16cc48649a4dad41552efb95f0091986 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fc3fdd27d642771805e0cf5ecae0799 |
publicationDate |
2013-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2012145657-A3 |
titleOfInvention |
Selective silicon nitride etch |
abstract |
Methods and etchant solutions for etching silicon nitride on a workpiece are provided. One method generally includes exposing the workpiece to a chemistry mixture including phosphoric acid and a diluent, wherein the chemistry mixture has a water content of less than 10% by volume, and heating at least one of the workpiece and the chemistry mixture to a process temperature to etch silicon nitride from the workpiece. |
priorityDate |
2011-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |