| abstract |
Provided are: an epitaxial silicon carbide (SiC) single-crystal substrate which comprises an SiC single-crystal substrate and a high-quality SiC single-crystal thin film that is formed thereon and that has fewer stacking faults; and a process for producing the same. An epitaxial SiC single-crystal substrate obtained by growing, on an SiC single-crystal substrate having an off-angle of 4° or less, an SiC epitaxial layer that contains less than 10 stacking faults per square centimeter in total, said stacking faults emitting light at wavelengths of 400 to 600nm through photoluminescence. A process for producing an epitaxial SiC single-crystal substrate by forming an epitaxial layer using a chlorosilane as a silicon material gas and a hydrocarbon gas as a carbonaceous material gas at a growth temperature of 1600 to 1700°C, a C/Si ratio of 0.5 to 1.0, and a growth rate of 1 to 3μm/h. |