| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e4c85f7dbff1ff2de4ff075c00e40ad5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ebcc96a1c2a0286b77b03d7c37cbb05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_55966d208f7a2b5d69b09b576349a7d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d632101eddf7e7df2521a06b719ee6b6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24612 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-09 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16 |
| filingDate |
2012-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5101b1e3898e336bed0d577ddf63de0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16f5df9ee892f6fd022870df01ad987e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1afc827cd2cdbebc47c13208d77dd9c2 |
| publicationDate |
2012-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2012143446-A1 |
| titleOfInvention |
Methods and materials for lithography of a high resolution hsq resist |
| abstract |
A method of fabricating a substrate-HSQ resist material in which the substrate is selected from germanium (Ge ) or gallium arsenide (GaAs) comprises the steps of pretreating a surface of the substrate to provide halogen termination of the substrate surface such that surface oxide is removed, and applying a HSQ resist to the surface. Removal of surface oxide allows the use of aqueous HSQ developers without causing damage to the surface. Also disclosed is a substrate-HSQ resist material, in which the substrate is selected from germanium or gallium arsenide, suitable for use in nanodevice fabrication and comprising a germanium or gallium arsenide substrate having a surface bearing a high resolution HSQ resist film or layer, in which the substrate has a halogen terminated surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11199363-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019007927-A1 |
| priorityDate |
2011-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |