| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0bca4bac5edd321c9f72b52606198db1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d2dfa241b3b5788a549d6e055eca882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c4a85899de2df408c8a849b077bebeed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f140b4bd19d2bfa7a44103af2578b0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_359d14c5771cb063ec7f3f1b0010bf8e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2012-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e32b20f0314a20964bda0bc69708cab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6b1e971f38cb6a20a3a51bbfcbd2e5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb4eaf2d92107ad6989f9c347c6f244e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0cdacb4cfece02c1f6a65b890395486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94d47e5b0a848ca54c2833d6beb82778 |
| publicationDate |
2012-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2012141122-A1 |
| titleOfInvention |
Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device |
| abstract |
A high-k gate insulating film and metal gate electrode are introduced into a MISFET with 32 nm technology or later nodes. In this case, there is a problem with increases in the absolute value of the threshold voltage for an n-MISFET and p-MISFET because of high temperature heat treatment afterwards. Therefore, various types of threshold voltage adjusting metal films and the like are formed on high-k gate insulating films, and the threshold voltage is controlled by introducing these film components therefrom to the high-k gate insulating film. However, the present inventors and others have made it clear that lanthanum and the like introduced into high-k gate insulating films in n-MISFETs have the problem of easily migrating into STI regions because of heat treatment thereafter.nThe present invention provides an N channel threshold value adjusting element outward diffusion preventing region in the lower part of n-MISFET gate stacks and surface parts of peripheral element isolation regions in a semiconductor integrated circuit device. |
| priorityDate |
2011-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |