http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012129005-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f42e3fd3be88e494c9ee66a27273a344 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c2032188233fc7c18c25694874b37d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8972aa2f7a2695af06a6b5a10df7f39c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32138 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2012-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_126bb95a54c2f4478e1e194c57d59f63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dae208db5062febe298cf180dfb78569 |
| publicationDate | 2012-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2012129005-A1 |
| titleOfInvention | Method for patterning a full metal gate structure |
| abstract | A method of patterning a gate structure (100, 100', 200) on a substrate (25, 105, 210) is described. The method includes preparing a metal gate structure (100, 100', 200) on a substrate (25, 105, 210), wherein the metal gate structure (100, 100', 200) includes a high dielectric constant (high-k) layer (230), a first gate layer (120, 240) formed on the high-k layer (230), and a second gate layer (130, 250) formed on the first gate layer (120, 240), and wherein the first gate layer (120, 240) comprises one or more metal-containing layers (240A, 240B). The method further includes preparing a mask layer (260, 270) with a pattern overlying the metal gate structure (100, 100', 200), transferring the pattern to the second gate layer (130, 250), transferring the pattern to the first gate layer (120, 240), and transferring the pattern in the first gate layer (120, 240) to the high-k layer (230), and prior to the transferring of the pattern to the high-k layer (230), passivating an exposed surface (245) of the first gate layer (120, 240) using a nitrogen-containing and/or carbon-containing environment to reduce under-cutting (140, 140') of the first gate layer (120, 240) relative to the second gate layer (130, 250), wherein the passivating is performed separately from or in addition to the transferring of the pattern to the first gate layer (120, 240). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10128236-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10734380-B2 |
| priorityDate | 2011-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.