| abstract |
The present invention relates to a noble group IV-B organometallic compound represented by formula 1 below, and to a method for preparing same, and more particularly, to a group IV-B organometallic compound which is applicable to chemical vapor deposition (CVD) or atomic layer deposition (ALD), and which is thermally and chemically stable, and to a method for preparing same. The group IV-B organometallic compound synthesized according to the present invention is highly volatile and thermally stable, and can thus be advantageously used for the preparation of group IV-B metal oxide films. In formula 1, M is Ti, Zrf or Hf, R 1 is an alkyl group of C 1 -C 4 , and R 2 and R 3 are, independently, C 1 -C 6 alkyl groups. |