| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ceaf9247e6732f0c37af42e8136db135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e0bf0928b608797b70bbc2b91c7e52e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f494bee46d8fad93e6a2e93b61c20be6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a48956266f63ae9f431456118a5b2c88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42188412d11a11a6ff7c07b39b899b70 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-50 |
| filingDate |
2012-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33611315b582f59b2aa61259511205a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bde9b0330baa1f2d2999b6f18a593949
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da68de7ec8962187bb6a45838bcbe02a |
| publicationDate |
2012-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2012123839-A1 |
| titleOfInvention |
Method for forming through-base wafer vias |
| abstract |
Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1 ) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015052988-A1 |
| priorityDate |
2011-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |