| abstract |
Provided is a method for extracting charge distribution along a channel in a metal-oxide-semiconductor (MOS) transistor. The method is applied in extraction of distribution of interface state charges and gate dielectric charges in an MOS transistor and comprises: adding an MOS transistor to a test circuit, and measuring, by a charge pump current test method, two charge pump current curves of a drain open circuit or a source open circuit of the MOS transistor before and after stress, one being an origin curve, and the other being a post-stress curve; and finding a point B on the post-stress curve corresponding to any point A on the origin curve, and estimating the quantity of locally generated interface state charges and gate dielectric layer charges according to a charge pump current variation and a voltage variation of local points. The method can extract the distribution of charges from a drain or source to a channel easily and rapidly with the assistance of a computer. |