http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012099227-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3e0dd01e9e407dbc59dbde5c8c874413 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a8889c046c0e49bf17950f1fcdeb586b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03b48eda0dce2900ab78d9ad583d0317 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-191 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-468 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2012-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1064db5f4e7afe0623ec4ae86bdefd66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ca4175011b99cbbe624dd4c372b59c8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c27e81b6900b38eabecd4a345954abb5 |
| publicationDate | 2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2012099227-A1 |
| titleOfInvention | A method for fabricating an organic thin film transistor with a fluropolymer banked crystallization well and an organic thin film transistor |
| abstract | A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes. |
| priorityDate | 2011-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.