| abstract |
An SOI type P-LDMOS is provided, comprising: a semiconductor substrate layer (10), a dielectric buried layer (102) and a semiconductor active layer (103). There are multiple spaced n ＋ doped regions (113) in the semiconductor active layer, placed on the interface between the dielectric buried layer and the semiconductor active layer, and on the side of the semiconductor active layer. And, there are no light-doped drain regions in the semiconductor active layer. |