| abstract |
A gallium nitride sintered body or gallium nitride molded body having high density and low oxygen content is provided without using a special apparatus. According to a first embodiment of the present invention, there can be obtained a gallium nitride sintered body which is characterized by having a density of 2.5 g/cm 3 or more but less than 5.0 g/cm 3 and an intensity ratio of the peak of the (002) plane of gallium oxide relative to the peak of the (002) plane of gallium nitride as measured by X-ray diffraction of less than 3%. According to a second embodiment of the present invention, there can be obtained a gallium metal-permeated gallium nitride molded article which is characterized by containing a gallium nitride phase and a gallium metal phase, said phases being present as separate phases, and having a molar ratio Ga/(Ga + N) of 55-80% (inclusive). |