| abstract |
Disclosed is a cleaning liquid with a low etching ability which is suitable for cleaning thick photoresists. The cleaning liquid for photoresists with a low etching ability comprises: potassium hydroxide, conventional solvent, pentaerythritol, alkylol amine and phenolic compounds, which phenolic compounds are selected from one or more of resorcinol and derivatives thereof, and phloroglucinol and derivatives thereof. The cleaning liquid for photoresists with a low etching ability can be used for removing photoresist and other residues on metals, metal alloys or dielectric materials. At the same time, the cleaning liquid has a low etching rate for metals such as copper (Cu), aluminium (Al), etc., and has a good application prospect in the field of micro-electronics such as semiconductor wafer cleaning and the like. |