| abstract |
The invention relates to a process for producing a light-absorbing semiconductor component (10), in which process at least a partial area (240) of a semiconductor substrate (100) is irradiated with a plurality of laser pulses of a predefinable length, wherein the pulse shape of the laser pulses is adapted to at least one predefinable desired shape by modulation of the amplitude and/or of the polarization. Furthermore, the invention relates to a semiconductor component (10) for converting electromagnetic radiation into electric power, comprising a crystalline semiconductor substrate (100) with a first side (101) and an opposite, second side (102), wherein a dopant is introduced at least in a partial volume (110) of the semiconductor substrate (100) which adjoins the first side, such that a first pn junction (21) is formed between the partial volume (110) and the semiconductor substrate (100), wherein at least a first partial area (240) of the second side (102) is provided with a dopant and a surface modification, such that a second pn junction (22) is formed. |