| abstract |
Disclosed are a photoresist topcoat for use in a mask for extreme ultraviolet lithography, and a composition for preparing the photoresist topcoat. The composition for preparing the photoresist topcoat comprises: a) 100 parts by weight of a water-soluble binder resin; b) 0.01 to 30 parts by weight of an ultraviolet screening agent for screening out-of-extreme-ultraviolet-band radiation; and c) 1,000 to 10,000 parts by weight of a protic solvent. When the photoresist topcoat of the present invention is used, defects of a circuit pattern caused by out-of-band ultraviolet rays of extreme ultraviolet lithography may be remarkably reduced and a rough line width may be improved. |