| abstract |
The present invention relates to a method for the hydrogen passivation of semiconductor layers, wherein the semiconductor layer (1) to be passivated is electrochemically passivated. In the context of the method according to the invention, in particular the semiconductor layer (1) to be passivated can be inserted as a cathode into an electrolysis apparatus comprising an anode (3) and an electrolyte (2) containing a proton source, and an electrolysis voltage can be applied to the semiconductor (1) and the anode (3). Furthermore, the present invention relates to semiconductor layers obtainable by the method according to the invention. |