patent/WO-2012040245-A2

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012040245-A2

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1069cbb354095988e0c6282ce6ebea32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_197bd3ee916c7e7d7b595e37ea7a129c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_52cd00892a548e92d179344efa0bd3bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_71b5a6fdf7ff1a31059c74041a91618d
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0235
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G7-06
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G7-00
filingDate	2011-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc530e058bc1d9bd6ac8f1e28f72544f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6078fba77f88fa3026f6a62fcb1d915 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0499b51306205b5af8d90ab66d939af5
publicationDate	2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	WO-2012040245-A2
titleOfInvention	Through silicon via with reduced shunt capacitance
abstract	This document refers to apparatus and methods for a device layer of a microelectromechanical system (MEMS) sensor having vias with reduced shunt capacitance. In an example, a device layer can include a substrate having a pair of trenches separated in a horizontal direction by a portion of the substrate, wherein each trench of the pair of trenches includes first and second vertical layers including dielectric, the first and second vertical layers separated by a third vertical layer including polysilicon.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9856132-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9586813-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9156673-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8813564-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8742964-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9444404-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9802814-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8978475-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9425328-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9069006-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10060757-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10065851-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9488693-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8739626-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9094027-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9618361-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9095072-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9062972-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10050155-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9352961-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9599472-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006846-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9246018-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9455354-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9278846-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9278845-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8710599-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9625272-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8754694-B2
priorityDate	2010-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

Total number of triples: 58.