| abstract |
Methods for formation of silicon carbide on substrate are provided. Atomic layer deposition methods of forming silicon carbide are described in which a first reactant gas of the formula Si n H a X b wherein n=1-5, a+b=2n + 2, a>0, and X=F, CI, Br, I; and a second reactant gas of the formula MR 3-b Y b , wherein R is a hydrocarbon containing substituent, Y is a halide, hydride or other ligand and b=1-3 are sequentially deposited on a substrate and then exposed to a plasma. The process can be repeated multiple times to deposit a plurality of silicon carbide layers. |