| abstract |
The present invention is a resist pattern forming method having: (1) [A] a step of coating a composition for forming a resist lower layer film containing polysiloxane on a substrate, and forming the resist lower layer film; (2) [a1] a step of coating a radiosensitive resin composition containing a polymer in which the solubility with respect to an organic solvent is reduced by modifying the polarity through the action of an acid, and forming the resist film; (3) a step of exposing the resist film; and (4) a step of developing the exposed resist film using a developing fluid containing an organic solvent. |