| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_db64767f934fe5f3ba570d1a46e9a168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_abd824cfe0532cc91c9f3e0dd5efa351 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-1426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-1424
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3142
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-626 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2011-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83298e169f9df8ed7a2d77f777d972ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3a61d439562546c94f9732d4e73ac55 |
| publicationDate |
2012-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2012029664-A1 |
| titleOfInvention |
Organic thin film transistor and method for manufacturing same |
| abstract |
Provided is an organic thin film transistor which comprises a charge injection layer that is not easily oxidized even in the atmosphere and is not easily deteriorated functionally. Specifically provided is an organic thin film transistor (10) which comprises: a gate electrode (20A); a first source/drain electrode (60A); a second source/drain electrode (60B); an organic semiconductor layer (40) that is arranged between the first source/drain electrode and the gate electrode and between the second source/drain electrode and the gate electrode; and charge injection layers (50A, 50B) that are respectively arranged between the first source/drain electrode and the organic semiconductor layer and between the second source/drain electrode and the organic semiconductor layer so as to be respectively in contact with the first source/drain electrode and the second source/drain electrode. The charge injection layers contain an ionic polymer that has charge injection characteristics. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2521138-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2521138-B |
| priorityDate |
2010-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |