| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51ea83920fa687e50007860670ffd5ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_597e8424ecafc8a882bec76f3c7bb1f7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6576 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate |
2011-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a53da13cc41ab41bdd7cfe658fe945ff |
| publicationDate |
2012-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2012022935-A1 |
| titleOfInvention |
Low contact resistance organic thin film transistors |
| abstract |
The present invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. The use of said solvents gives devices with lower absolute contact resistance, lower absolute channel resistance and lower proportion of contact resistance to the total channel resistance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019139577-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015523729-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016511549-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014140568-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742429-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2526466-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2526466-B |
| priorityDate |
2010-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |