| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8a0de5177fefc72365c86c0a70936fba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d72339a6b893476ba374b394b9685349
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268f6512c61aa2d698778b80b56c303b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca5502a2e64ad3d3b3f543b5405a25d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4fc5df32ecdb58086082f2c857323821 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2111-00844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-9607
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3852 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-5062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-009 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate |
2011-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9538d4761910df75d0197a1987174f35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_116e91607dde872d76ee57edafcd9b1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9508fe1f8097db05e84595629f34756
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7681d2b4a33eca2a734a110876f0342b |
| publicationDate |
2012-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2012020676-A1 |
| titleOfInvention |
Polycrystalline aluminum nitride base material for gan-base semiconductor crystal growth and gan-base semiconductor production method using same |
| abstract |
The present invention provides a polycrystalline aluminum nitride base material with a similar linear expansion coefficient to GaN. The polycrystalline aluminum nitride base material used as a substrate material for crystal growth of GaN-base semiconductors is characterized by having an average linear expansion coefficient of 4.9X10 -6 /K - 6.1X10 -6 /K between 20°C and 600°C and 5.5X10 -6 /K - 6.6X10 -6 /K between 20°C and 1,100°C. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013212963-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016046459-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018080103-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015182928-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104703939-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015146978-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014004079-A1 |
| priorityDate |
2010-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |