| abstract |
A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe 2 ) 4 ; Ti(NMeEt) 4 ; Ti(NEt 2 ) 4 ; TiCl4; tBuN=Nb(NEt 2 ) 3 ; tBuN=Nb(NMe 2 ) 3 ; t-BuN=Nb(NEtMe) 3 ; t- AmN=Nb(NEt 2 ) 3 ; t-AmN=Nb(NEtMe) 3 ; t-AmN=Nb(NMe 2 ) 3 ; t-AmN=Nb(OBu-t) 3 ; Nb-13; Nb(NEt 2 ) 4 ; Nb(NEt 2 ) 5 ; Nb(N(CH 3 ) 2 ) 5 ; Nb(OC2H 5 ) 5 ; Nb(thd)(OPr-i) 4 ; SiH(OMe) 3 ; SiCU; Si(NMe 2 ) 4 ; (Me 3 Si) 2 NH; GeR a x(OR b ) 4.x wherein x is from 0 to 4, each R a is independently selected from H or C 1 -C 8 alkyl and each R b is independently selected from C 1 -C 8 alkyl; GeCl 4 ; Ge(NR a n 2 ) 4 wherein each R a is independently selected from H and C 1 -C 8 alkyl; and (R b n 3 Ge) 2 NH wherein each R b is independently selected from C 1 -C 8 alkyl; bis(N,N'-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices. |