| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1aa686f47ec9e0980f209d17117aae0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4a91779af73e8a24e182c9e1b94a3481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2dee2172f2f1e13ee7f52ecea5664eb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0aa485d286850898ac84bdb906bc1a41 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38 |
| filingDate |
2011-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8718985bd56255f12f6d2fce127fd23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a2f39e7174caffc87be5a856a6ab3cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1308c9d4d3ced0d2c1abd1a800305a83 |
| publicationDate |
2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011154493-A1 |
| titleOfInvention |
Copper-electroplating composition and process for filling a cavity in a semiconductor substrate using this composition |
| abstract |
The subject-matter of the present invention is a composition especially intended for filling, by the electroplating of copper, a cavity in a semiconductor substrate such as a "through-via" structure for the production of interconnects in three-dimensional integrated circuits. According to the invention, this composition comprises in solution in a solvent: - copper ions in a concentration lying between 45 and 1500 mM; - a complexing agent for the copper consisting of at least one compound chosen from aliphatic polyamines having 2 to 4 amino groups, preferably ethylenediamine, in a concentration lying between 45 and 3000 mM; - the molar ratio between the copper and said complexing agent lying between 0.1 and 5; - thiodiglycolic acid in a concentration lying between 1 and 500 mg/l; and - optionally a buffer system, in particular ammonium sulfate, in a concentration lying between 0.1 and 3M. Application: fabrication of three-dimensional integrated circuits for the electronics industry. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102206291-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840101-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10472726-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11078591-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2995912-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014044942-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150056655-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104685107-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10329683-B2 |
| priorityDate |
2010-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |