| abstract |
Disclosed are an insulation pattern forming method and a damascene process insulation pattern forming material capable of easily forming a multilayer structure without a complicated etching step. The disclosed insulation pattern forming method involves (I) a step for forming an organic pattern on a substrate, (II) a step for embedding an insulation material between the patterns of the organic pattern, (III) a step for removing the organic pattern to obtain a reversal pattern consisting of insulation material, and (IV) a step for curing the obtained reversal pattern. |