| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a9eb8543186ef4d4b01c634fd9119769
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ccb3d63562d60f5dd1672053cb0d830
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8a2bb96b9629f7fe35edf077eadbc5fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-04 |
| filingDate |
2011-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3be42e57c521975bddafe71f9f76d3eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7dd9919e1890b7b455d08bebb2c02b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_473d0b6889f05cc7b651bde609e4d835 |
| publicationDate |
2011-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011146700-A1 |
| titleOfInvention |
High power gallium nitride field effect transistor switches |
| abstract |
A monolithic high power radio frequency switch includes a substrate, and first and second gallium nitride high electron mobility transistors on the substrate. Each of the first and second gallium nitride high electron mobility transistors includes a respective source, drain and gate terminal. The source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground. An RF input pad is coupled to the drain terminal of the first second gallium nitride high electron mobility transistor, an RF output pad is coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor. |
| priorityDate |
2010-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |