| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4cff781416a274652412c9d82259efa2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7cc3a0cc87101cfeadc82447d19be63b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3b77c255bb0bad9955142f1ecc129327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_92263175e287ffe10c5bff101baaf857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37b416a8c0d2b0f1c3d6026d932027af |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0083 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-328 |
| filingDate |
2010-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_021b42f935079b485b5a606a444ad4e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bb9be750de662df5d73f95beefd9eac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67f9205b1743bdb733cc11cd5644a5ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36c36c54c3acc804d77c7cfcd377f6b3 |
| publicationDate |
2011-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011146015-A1 |
| titleOfInvention |
Method of forming a light emitting diode structure and a light emitting diode structure |
| abstract |
A method of forming a vertical III-nitride based light emitting diode structure and a vertical III-nitride based light emitting diode structure can be provided. The method comprises forming a III-nitride based light emitting structure on a silicon-on-insulator (SOI) substrate; forming a metal-based electrode structure on the III-nitride based light emitting structure; and removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based substrate of the light emitting structure. |
| priorityDate |
2010-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |