http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011114046-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
filingDate 2011-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_416b57c796cc405706bc38836166cf0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df597289d7abdf9201ecf4fc0681a3e1
publicationDate 2011-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2011114046-A1
titleOfInvention Process for producing a conducting electrode
abstract The present invention relates to a process for producing a conducting electrode on a substrate, comprising the following steps: a layer (213) made of a dielectric is deposited; a protective layer (214) made of the nitride of a metal M is deposited on the dielectric layer; a functionalization layer (215) made of a material comprising a chemical species E is deposited, such that the free enthalpy of formation of the nitride of this species is less, in absolute value, than the free enthalpy of formation of the nitride of the metal M of said protective layer (214) over the temperature range between 0°C and 1200°C; and the assembly comprising said protective layer (214) and said funtionalization layer (215) is annealed (218) so that the species E diffuse from the functionalization layer (215) into the protective layer (214) and the nitrogen atoms migrate from the protective layer (214) into the functionalization layer (215).
priorityDate 2010-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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