| abstract |
In order to improve IGBT characteristics, in particular to reduce steady loss, turn-off time, and turn-off loss, an IGBT is provided with a base layer (2), a buried insulating film (3) having open sections (5), a surface semiconductor layer (4) that is connected to the base layer (2) below the open sections (5), a p-type channel formation layer (7) that has been formed in the surface semiconductor layer, an n+-type source layer (8), a p+-type emitter layer (9), gate electrodes (11) that have been formed upon the surface semiconductor layer (4) with a gate insulating film (10) therebetween, an n+-type buffer layer (18), a p-type collector layer (19), and the like, wherein the thickness of the surface semiconductor layer (4) is about 20 nm to 100 nm. |