| abstract |
Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM (322) can be formed on surfaces (308) for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length (334) and a second SAM precursor having molecules of a second length (338) shorter than the first. Examples of exposed surfaces for which a mixed SAM (322) can be provided over include reactor surfaces and select surfaces of integrated circuit structures (800), such as insulator and dielectric layers. |