http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011065723-A2

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7025dd521889319fc74da2dc8da0e31a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-647
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
filingDate 2010-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94add63359ef27a886841fa662452210
publicationDate 2011-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2011065723-A2
titleOfInvention Vertical-structure semiconductor light emitting element and a production method therefor
abstract The present invention relates to a vertical-structure semiconductor light emitting element and to a production method therefor, and more specifically relates to a vertical-structure semiconductor light emitting element having a high-performance heatsink support comprising a thick metal film or metal foil. The vertical-structure semiconductor light emitting element produced in accordance with the present invention constitutes a highly reliable light emitting element with absolutely no thermal or mechanical damage since it has the high-performance heatsink support and so suffers no fine microcracking and can be freely subjected to heat treatment and to post-processing including of a side-surface passivation thin film.
priorityDate 2009-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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