http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011063292-A2

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filingDate 2010-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ebb7c9fdaba209259e9244118257916
publicationDate 2011-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2011063292-A2
titleOfInvention Semiconductor device having strain material
abstract A semiconductor device having strain material is disclosed. In a particular embodiment, the semiconductor device includes a first cell including a first gate between a first drain and a first source. The semiconductor device also includes a second cell adjacent to the first cell. The second cell includes a second gate between a second drain and a second source. The semiconductor device further includes a shallow trench isolation area between the first source and the second source. A first amount of strain material over the first source and over the second source is greater than a second amount of strain material over the first drain and over the second drain.
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Total number of triples: 26.