| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d2ce08b9d02b33f9c361e1cf005dbab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_40154b1df9cdc04707f56ea55b5052a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e0f55df4003fa32f21f63160db9045f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e2934b570d4e721001d13384b7a0182 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-186 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 |
| filingDate |
2010-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_502c1a5d7de4f177a83b2305e7978b2a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a90378a5c8a4e408bf00c68761d8ddd7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aab5195c27db4f3ea5987f1616de6251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef3c9c7e62ebcfeb19646044de8eb6bc |
| publicationDate |
2011-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011060895-A3 |
| titleOfInvention |
Method for treating a semiconductor structure |
| abstract |
The invention relates to a method for treating a semiconductor structure which is a solar cell or a precursor of a solar cell and has at least one emitter, the emitter being generated in the semiconductor structure by means of a doping agent and at least partly covering a measuring side (1) of the semiconductor structure, comprising the following method steps: A determining at least one region of high curvature on the measuring side (1) of the semiconductor structure which is characterized by a low radius of curvature at least in one dimension, B driving in the doping agent already present in the semiconductor structure in the region of high curvature (2) in order to increase the emitter depth in the region of high curvature (2), and/or adding additional doping agent in order to increase the emitter depth in the region of high curvature (2). |
| priorityDate |
2009-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |