| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b3e3de86fb3a7d008414342c8035051 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-385 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 |
| filingDate |
2010-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af6a02b68c677ba878e38b95cdb88ad3 |
| publicationDate |
2011-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011052932-A1 |
| titleOfInvention |
Semiconductor device |
| abstract |
Semiconductor devices including a light emitting layer, and at least one surface plasmon metal layer in contact with the light emitting layer are provided. The light emitting layer includes an active layer having a first band gap, and one or more barrier layers having a second band gap. The first band gap is smaller than the second band gap. Methods for fabricating semiconductor devices are also provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2552386-C1 |
| priorityDate |
2009-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |