| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8711ea5c1b04a5bcf6e0a9686beb6686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_50b0ac291cfed8be15f31fb6ac795119
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa0ed780cd77fd903ff9c2290876c8c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d942f39b5a1b204723e097888e49b3dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a3f15dfdc17676fb822e47c1476b3847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_755adf376be42246db8eff81a1921d00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bda41495a7a4a8fe3804344a7f50de5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-407 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09C1-36 |
| filingDate |
2010-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b1cfb165adcfe7d47b7516b29c24e54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d4430ca30f3d530eeaafff9e718d260
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c7281103bc16fb5f9fffdfb8bf238e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11dbfbde97656bb3277c5a261424b519
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a057474e58accd9c39dee3ba1aef50f8 |
| publicationDate |
2011-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011035307-A1 |
| titleOfInvention |
Fluorine compounds for doping conductive oxide thin films |
| abstract |
Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10570189-B2 |
| priorityDate |
2009-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |