| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64e3824b9e49d99b734bfea820844dca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2010-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_069a824e3198516664b2935c0fbc4c90 |
| publicationDate |
2011-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011033718-A1 |
| titleOfInvention |
Method for forming a crystalline silicon film, and thin-film transistor and display device using said method |
| abstract |
Provided is a method that uses a laser with a wavelength in the visible-light region to form a crystalline silicon film having stable crystallinity. The provided method includes a first step that forms a metal film, a second step that forms an insulating film on top of the metal film, and a third step that forms on the insulating film a crystalline silicon film comprising polycrystalline silicon. In the second step, the insulating film is formed with a thickness between 160 nm and 190 nm. The third step includes: a step in which an amorphous silicon film comprising amorphous silicon is formed, on the insulating film, with a thickness between 30 nm and 45 nm; and a step in which a crystalline silicon film is formed by irradiating the amorphous silicon film with light from a laser with a wavelength in the visible-light region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9929274-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013153028-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8679907-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013030865-A1 |
| priorityDate |
2009-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |