| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e366c1a08acb26c0033968c1ccf6486d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e4c1de94fa8eb6cefb682f2e27aedd9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9f6c98330573b897caf19f64ffa628cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f0df3ae7034e91261b98284508cbbb15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 |
| filingDate |
2010-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2bdcb63cd53b8adef2647cd60adcadc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8608bc062d8768eea9e11bd24ccf16b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_292691c04822f598a6379e67364ce779
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d454fef5996d877786283749fc411e2 |
| publicationDate |
2011-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011027624-A1 |
| titleOfInvention |
Group iii-v compound semiconductor light receiving element, method for manufacturing group iii-v compound semiconductor light receiving element, light receiving element, and epitaxial wafer |
| abstract |
Disclosed is a group III-V compound semiconductor light receiving element, which comprises an n-type InP window layer and a light receiving layer having a group III-V compound semiconductor layer that contains Sb as a group V element, and which is capable of reducing dark current. Due to the memory effect of antimony supplied during the growth of an GaAsSb layer of a light receiving layer (21), antimony is contained as an impurity in an InP layer (23) that is grown on the light receiving layer (21). In a group III-V compound semiconductor light receiving element (11), the InP layer (23) contains antimony as an impurity and silicon is added to the InP layer (23) as an n-type dopant. Although the antimony impurity in the InP layer (23) functions to produce holes, silicon added to the InP layer (23) compensates the thus-produced carriers and thus a second portion (23d) of the InP layer (23) exhibits sufficient n-type conductivity. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015015306-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014054545-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014175128-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9680040-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014216382-A |
| priorityDate |
2009-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |