| abstract |
High performance thin-film, transistors entirely processed at temperatures not exceeding 150°C, using amorphous multi component dielectrics based on τ.he mixture of high band gap and high dielectric constant ( K) materials are presented in this invention. The invention relates to the use of sputtered or ink jet printed mixed dielectric materials such as Ta 2 O 5 with SiO 2 or Al 2 O 3 or HfO 2 with SiO 2 or Al 2 O 3 . These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga-In-Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta 2 O 5 :SiO 2 , exhibiting field- effect mobility exceeding 35 cm 2 V -1 s -1 , close to 0 V turn- on voltage, on/off ratio higher than 10 6 and subthreshold slope below 0.24 V dec -1 . |