| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47487b1d877f3f2df6e0fed7a473921e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb500c42e915e25af5d03f897f310be2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3725e26bc536e4f83e562214b2e8dcb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c152f54b03b53acb45d207d1814e9d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4a2a3c631bab19b36d37e01ef9406ae4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4558 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2010-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efe594f7e9cf12a1bd68f74da9490257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3040ec0816ed4105da26f506977b985c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10c93709c6638d3b30d7a98f65cc9c98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce6a8613dd51e743df9ed8f7bec9fea9 |
| publicationDate |
2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010140889-A1 |
| titleOfInvention |
Method for passivating at least a part of a substrate surface |
| abstract |
A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least one layer comprising at least one a-Si:H passivation layer is realized on said part of the substrate surface by: - generating a plasma (P) by means of at least one plasma source (3) mounted on the process chamber (5) at a distance (L) from the substrate surface, at least part of the plasma (P) being injected into the chamber (5) and achieving a supersonic speed; - contacting at least a part of the plasma (P), injected into the chamber (5), with the said part of the substrate surface; and - supplying at least one precursor suitable for passivation layer realization to the said part of the plasma (P) via a plurality of injection nozzles (19) of an injector device (17), such that the density of the precursor at each injection nozzle (19) is lower than 12x10 22 particles/m 3 . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10020187-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10535513-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9984940-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013004439-A1 |
| priorityDate |
2009-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |