http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010136834-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d5aab2e339a50cfb5a5493045adcbc0 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-99 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-00 |
| filingDate | 2009-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8070624ea8718ef8155b30a28c3f4a7 |
| publicationDate | 2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2010136834-A1 |
| titleOfInvention | Method of realization of hyperconductivity and super thermal conductivity |
| abstract | The application relates to electricity, electro-physics and thermo conductivity of materials, to the phenomena of zero electric resistance, i.e. to hyperconductivity (superconductivity) and zero thermal resistance, i.e. to superthermoconductivity of materials at near-room and higher temperatures. The matter: on the surface of in the volume of non-degenerate or poorly degenerate semiconductor material or layer of such material on semi-insulating or dielectric substrate the electrodes are located forming rectifying contacts to the material. The distance between the electrodes (D) is chosen much smaller comparing to the depth of penetration into the material of the electric field caused by their contact difference of potentials (L), (D<<L). Minimum distance between the electrodes D MIN = 20 nanometers, maximum distance between the electrodes D MAX = 30 micrometers. Before, after or during forming of the gap having width D between the electrodes, electron-vibration centers (EVCs) are inputted into the material having concentration (N) from 2-10 12 cm -3 to 6-10 17 cm -3 . Temperature of the material is brought to the temperature of hyperconductivity transition (T h ) or higher. The technical result: possibility to achieve the said effect of hyperconductivity (superconductivity) and zero thermal resistance, i.e. to superthermoconductivity at the temperatures above T h and possibility to adjust the value of T h . |
| priorityDate | 2009-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.