| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4b9f84b1eab838dceec0bd0a136b5753
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f94181a07135f2510418b5c0c837e8ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a4740803d7bdd2c79584a101d1f8941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_18c51a05c946ceb7a1f1c351689fb23e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24ba129a4433fe5830a7f5eea24d88df |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-223 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-101 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-101 |
| filingDate |
2010-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0851a5062ad6ece84f958b4a1949762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8b85d610b0c1f3786c10ba0c218c4d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae84111493a372f7a8b1b80e5a0a597f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_761e9bbfd13f9d74c364f68b1de3ecfb |
| publicationDate |
2010-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010127298-A2 |
| titleOfInvention |
Low oxygen content semiconductor material for surface enhanced photonic devices associated methods |
| abstract |
Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation- absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C to about 1100° C, wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741399-B2 |
| priorityDate |
2009-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |