| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c692a8df244d749e1638f73aea03ef90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d162bd56c615b34a08f500b3c59cbf6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31749 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76892 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2010-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65035b536e2f7f5fd54e2a6ed8fab75b |
| publicationDate |
2010-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010120948-A1 |
| titleOfInvention |
Enhanced focused ion beam etching of dielectrics and silicon |
| abstract |
Silicon, silicon dielectrics and low-k dielectrics are etched in a focused ion beam process using gaseous fluorinating etchants selected from the group of triethylamine trihydrofluoride (TEATHF) and xenon fluoride. Xenon fluoride is combined with a secondary protecting agent to avoid undesired corrosion of bare silicon. The protecting agent may be an oxidizing agent such as oxygen, perfluorotripentylamine (PFTPA), or a heavy completely fluorinated hydrocarbon. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2214200-A3 |
| priorityDate |
2009-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |