| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_daba09229b56bcb418bd37442ff646a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7371
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7785 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate |
2010-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e71852a48feb75b8f17a0e6c306b0e6b |
| publicationDate |
2010-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010116700-A1 |
| titleOfInvention |
Semiconductor substrate, manufacturing method therefor, and electronic device |
| abstract |
Disclosed is a chemical compound semiconductor substrate suited for the formation of multiple different types of devices such as HBTs and FETs on a single semiconductor substrate. Said semiconductor substrate is provided with: a first semiconductor; a carrier trap layer that is formed on top of the first semiconductor and has electron capture centers or hole capture centers; a second semiconductor that is epitaxially grown on top of the carrier trap layer and functions as a channel for free electrons or free holes to move in; and a third semiconductor that includes either an N-P-N or a P-N-P layered semiconductor structure epitaxially grown on top of the second semiconductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9559196-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110739305-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110739305-B |
| priorityDate |
2009-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |