| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ea53bc5d09e1682fb12bbae28290a2f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49f04b1dc6b9fcc2d8b159c5ebee364b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2302f6f29f08139be54e69c7ea3ea764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_612d23d79c1f4d903c152ff5b7335bff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35f46c87e1022db712bec1277479e4b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f50ad6767be3de8df0af5280201c6b0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1446
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107 |
| filingDate |
2010-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94ec6f5eb8d9529019de89267fadfaed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24f626eefcbbeebc55900a73363950cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88c63bb47d72938b6afd344c0d02cedd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06490962cd879b296b8a9c245996b73b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e49c2c698022ae3a92b0a97fffb05815 |
| publicationDate |
2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010098221-A1 |
| titleOfInvention |
Photodiode and photodiode array |
| abstract |
A p- type semiconductor substrate (20) has a first main surface (20a) and a second main surface (20b) which oppose each other, and includes a photosensitive region (21). The photosensitive region (21) is comprised of an n+ type impurity region (23), a p+ type impurity region (25), and a region which is depleted when a bias voltage is applied in the p- type semiconductor substrate (20). Irregular recesses and projections (10) are formed on the second main surface (20b) of the p- type semiconductor substrate (20). An accumulation layer (37) is formed on the second main surface (20b) side of the p- type semiconductor substrate (20), and the region of the accumulation layer (37) which opposes the photosensitive region (21) is optically exposed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971655-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017179908-A1 |
| priorityDate |
2009-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |