| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a85d078a5b50969682ea3d7b47be64c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c153525772cb2a94f93ded9580e72cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64117d587efe40ef2e2594e9f6803c2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57ddfa59a587674e394a29d690d3b32a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-146 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-283 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-28 |
| filingDate |
2010-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16aa1285f53febea1a3f4fb60e2d4fa6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f37765a5a74e08b65d63772483101311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7afd46f5c26a1285a3c02a225bf0c92c |
| publicationDate |
2010-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010094531-A1 |
| titleOfInvention |
Ultra low post exposure bake photoresist materials |
| abstract |
Polymers comprising a first methacrylate monomer having a pendent spacer between the polymer backbone and an acid-liable acetal group, a second methacrylate monomer having a pendent group including a fluorinated alkyl group and a third methacrylate monomer having a pendent hydrocarbon group. Photoresist formulations include the polymers, a photoacid generator and a casting solvent. Methods of patterning photoresist films formed from the photoresist formulations are characterized by post-exposure bakes at temperatures of about 60°C or less. |
| priorityDate |
2009-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |