| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_15df2abadf14d4b909faf9ae87cb9c87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7fdc5eec9ef2c66d773518296d0472c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88e7c6b9e0c01e81aa067f2b48fce248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf297f8a9539dbdb77ba8b32896acead
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38e3f95b47deee24b0a2ca776393a706
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3cb6facf80ab7dc2eee9d7b57237bfb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_552fb829197e1d5985f4fdb51d6153a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d18403daa7a8059f81aeae1bbea2c81f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43b32b672d54160138f70960782dc4e0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2010-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_361a04c7ca06b95e42ecfe5b9d83fcc4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98e75a1bcb3d96528c08694b9b707bb2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74d2e2f85c77c961905c486c180b3bc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef7b98229f827748efab8366d8fca74d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbda69e96eccbeb1f7ce5f8ade1dec39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b490f45bd8a8be789791fc18ddff4fa7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74a347558f8294951f1ed35a57570cef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfeb714145ecc115ee1ab8d5d120be19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcb9c0aa4ba44f02d68d7de12818f519 |
| publicationDate |
2010-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010093567-A2 |
| titleOfInvention |
Method for fabricating a semiconductor device having a lanthanum-family-based oxide layer |
| abstract |
Methods for fabricating a semiconductor device having a lanthanum-family- based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified to form a lanthanum-family-based halide portion. The lanthanum-family-based halide portion is removed with a water vapor treatment. |
| priorityDate |
2009-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |